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| SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D TO-263 D Automotive - Boardnet 42-V EPS and ABS - Motor Drives D High Current D DC/DC Converters G G DS S N-Channel MOSFET Top View SUM110N06-04L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 110a 110a 440 75 280 437.5c 3.7 -55 to 200 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountd Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.4 Unit _C/W _ Document Number: 71704 S-20417--Rev. B, 08-Apr-02 www.vishay.com 1 SUM110N06-04L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 200_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 200_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0028 0.004 0.0035 0.005 0.0058 0.0088 S W 60 V 1 3 "100 1 50 10 nA mA m mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.4 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A VGS = 0 V, VDS = 25 V, f = 1 MHz 7500 1050 700 150 25 45 20 135 80 150 30 200 120 220 ns 220 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/ms IF = 110 A, VGS = 0 V 1.1 75 2.5 0.09 110 440 1.4 120 5 0.25 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71704 S-20417--Rev. B, 08-Apr-02 SUM110N06-04L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) 4V 150 I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 100 100 TC = 125_C 50 25_C 50 3V 0 0 2 4 6 8 10 -55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 350 TC = -55_C 300 g fs - Transconductance (S) 250 200 150 100 50 0 0 20 40 60 80 100 120 25_C r DS(on) - On-Resistance ( W ) 0.005 0.006 On-Resistance vs. Drain Current 0.004 VGS = 4.5 V VGS = 10 V 125_C 0.003 0.002 0.001 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 12000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 10000 C - Capacitance (pF) Ciss 16 VGS = 30 V ID = 85 A 8000 12 6000 8 4000 Coss 2000 Crss 0 12 24 36 48 60 4 0 0 0 50 100 150 200 250 300 VDS - Drain-to-Source Voltage (V) Document Number: 71704 S-20417--Rev. B, 08-Apr-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N06-04L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 200 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 Drain Source Breakdown vs. Junction Temperature 100 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) 75 ID = 10 mA 10 70 1 IAV (A) @ TA = 150_C 65 0.1 0.00001 0.0001 0.001 tin (Sec) 0.01 0.1 60 -50 -25 0 25 50 75 100 125 150 175 200 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71704 S-20417--Rev. B, 08-Apr-02 SUM110N06-04L New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 120 1000 Vishay Siliconix Safe Operating Area 100 100 I D - Drain Current (A) 80 I D - Drain Current (A) Limited by rDS(on) 10 10 ms 100 ms 60 1 ms 10 ms 100 ms dc 40 1 20 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 200 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71704 S-20417--Rev. B, 08-Apr-02 www.vishay.com 5 |
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